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首頁晶振新聞 艾博康的高質量石英晶體ABM8W-38.4000MHZ-4-B2U-T3,比較適合用于超低功耗MCU

艾博康的高質量石英晶體ABM8W-38.4000MHZ-4-B2U-T3,比較適合用于超低功耗MCU

來源：http://m.bsgccc.com 作者：siee 2022年07月27
Abracon公司為美國杰出的知名制造商,一直致力于研究高質量的石英晶體,通過自身的努力終有了一番成績,為廣泛應用程序提供了廣泛的石英定時晶體和振蕩器，MEMS振蕩器，實時時鐘(RTC)，藍牙模塊，陶瓷諧振器，鋸濾器和諧振器，功率和射頻電感，變壓器，電路保護元件和射頻天線和無線充電線圈。艾博康的高質量石英晶體ABM8W-38.4000MHZ-4-B2U-T3,比較適合用于超低功耗MCU
ABM8W-25.0000MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-26.0000MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-26.0000MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-26.0410MHZ-4-B1U-T3 Abracon晶振 * - -
ABM8W-26.0410MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-26.0410MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-27.0000MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-27.0000MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-27.1200MHZ-4-B1U-T3 Abracon晶振 * - -
ABM8W-27.1200MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-27.1200MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-28.2240MHZ-4-B1U-T3 Abracon晶振 * - -
ABM8W-28.2240MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-28.2240MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-28.3220MHZ-4-B1U-T3 Abracon晶振 * - -
ABM8W-28.3220MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-28.3220MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-28.6364MHZ-4-B1U-T3 Abracon晶振 * - -
ABM8W-28.6364MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-28.6364MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-29.4912MHZ-4-B1U-T3 Abracon晶振 * - -
The primary driving force behind this industry trend is related to the reduction in total consumed power, while improving overall performance. This effort is being undertaken to facilitate the practical implementation of battery powered end-solutions (consumer, medical, IoT, industrial, etc.), requiring extremely low power in a feature-rich environment. These advancements, however, have significantly impacted the traditional clocking circuit.
這石英晶振產品行業趨勢背后的主要驅動力與總消費量的減少有關動力強勁，同時提高整體性能。這一努力是為了促進實際工作實現電池驅動的終端解決方案(消費、醫療、物聯網、工業等)，需要在功能豐富的環境中極低的功耗。然而，這些進步意義重大沖擊了傳統的時鐘電路。
ABM8W-29.4912MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-29.4912MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-30.0000MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-30.0000MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-30.3200MHZ-4-B1U-T3 Abracon晶振 * - -
ABM8W-30.3200MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-30.3200MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-30.4000MHZ-4-B1U-T3 Abracon晶振 * - -
ABM8W-30.4000MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-30.4000MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-30.7200MHZ-4-B1U-T3 Abracon晶振 * - -
ABM8W-30.7200MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-30.7200MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-31.2500MHZ-4-B1U-T3 Abracon晶振 * - -
ABM8W-31.2500MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-31.2500MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-32.0000MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-32.0000MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-33.0000MHZ-4-B1U-T3 Abracon晶振 * - -
ABM8W-33.0000MHZ-4-B2U-T3 Abracon晶振 * - -
As the low power operation becomes paramount, the current mirrors biasing the inverter amplifier stage in the Pierce Oscillator loop are “starving” the amplifier. This approach has a significant impact on the transconductance of the inverter amplifier block which, in-turn, has a profound effect on the forward gain margin (GM) of the closed-loop oscillator circuit.
當低功耗工作變得至關重要時，電流鏡像偏置逆變放大器級在皮爾斯振蕩器環路是“饑餓”放大器。這種方法對逆變器放大器塊的跨導反過來對正向增益有深遠的影響閉環振蕩器電路的裕度(GM)。
The relationship between the forward gain (GM) and amplifier transconductance is defined as follows: GM = gm / gmcritical (1)
正向增益(GM)與放大器跨導的關系定義如下:GM = GM / gmcritical (1)艾博康的高質量石英晶體ABM8W-38.4000MHZ-4-B2U-T3,比較適合用于超低功耗MCU
ABM8W-33.0000MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-33.3300MHZ-4-B1U-T3 Abracon晶振 * - -
ABM8W-33.3300MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-33.3300MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-33.3330MHZ-4-B1U-T3 Abracon晶振 * - -
ABM8W-33.3330MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-33.3330MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-33.3333MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-33.8680MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-33.8688MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-35.4160MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-36.0000MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-37.0000MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-37.0500MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-37.4000MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-38.0000MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-38.4000MHZ-4-B1U-T3 Abracon晶振 * - -
ABM8W-38.4000MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-38.4000MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-38.8800MHZ-4-B1U-T3 Abracon晶振 * - -
ABM8W-38.8800MHZ-4-B2U-T3 Abracon晶振 * - -
Whereas: gm = inverter amplifier’s transconductance in µA/V gm(critical) = critical transconductance value to keep the amplifier in linear region
而:逆變放大器在μ A/V中的跨導Gm(臨界)=使放大器保持在線性區域的臨界跨導值
For robust oscillations using an inverter amplifier as the gain stage, it has been a well-established industry practice to target GM > 5.0 with a minimum desired value of > 3.0.
對于魯棒振蕩使用逆變放大器作為增益級，它已經得到了廣泛的認可行業慣例以通用的> 5.0為目標，期望的最小值為> 3.0。

For closed loop oscillator circuit, gm(critical) is defined as follows:
gm(critical) = 4 * ESR * (2πF)2 * (C0 + CL)2 (2)
對于閉環振蕩器電路，gm(臨界)定義如下:
gm(臨界)= 4 * ESR * (2π f)2 * (C0 + CL)2 (2)
Whereas; ESR = Effective Series Resistance of the resonator element (generally a quartz crystal)… units in k?’s or ?’s.
而;
ESR =諧振器元件(通常為石英晶體)的有效串聯電阻……單位為kΩ’s或Ω。
ABM8W-38.8800MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-39.0000MHZ-4-B1U-T3 Abracon晶振 * - -
ABM8W-39.0000MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-39.0000MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-40.0000MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-40.0000MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-40.6100MHZ-4-B1U-T3 Abracon晶振 * - -
ABM8W-40.6100MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-40.6100MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-40.9600MHZ-4-B1U-T3 Abracon晶振 * - -
ABM8W-40.9600MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-40.9600MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-41.6000MHZ-4-B1U-T3 Abracon晶振 * - -
ABM8W-41.6000MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-41.6000MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-42.0000MHZ-4-B1U-T3 Abracon晶振 * - -
ABM8W-42.0000MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-42.0000MHZ-4-D2X-T3 Abracon晶振 * - -
ABM8W-44.0000MHZ-4-B1U-T3 Abracon晶振 * - -
ABM8W-44.0000MHZ-4-B2U-T3 Abracon晶振 * - -
ABM8W-44.0000MHZ-4-D2X-T3 Abracon晶振 * - -
F = Resonant frequency of the resonator element (in the case of quartz crystals, generally parallel resonant frequency @ a specific plating load)… units in kHz or MHz
C0 = Composite package and electrode capacitance of the resonator element……. units in pF.
CL = Plating load of the resonator element……. units in pF.
F =諧振器元件的諧振頻率(在SMD晶振石英晶體的情況下，一般是平行的諧振頻率@特定電鍍負載)……單位為千赫或兆赫
C0 =諧振器元件的復合封裝和電極電容.......單位在pF。
CL =諧振器元件的電鍍負載.......單位在pF。

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